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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-B3K-EV

VI-B3K-EV

VI-B3K-EV DC-DC Booster Module, 150W; VI-B3K-EV
VI-2NV-CU

VI-2NV-CU

VI-2NV-CU DC-DC Regulated Power Supply Module, 1 Output, 200W, Hybrid, MODULE-9; VI-2NV-CU
VHFD37-14IO1

VHFD37-14IO1

VHFD37-14IO1 Silicon Controlled Rectifier, 31A I(T)RMS, 36000mA I(T), 1400V V(DRM), 1400V V(RRM), 2 Element, V1-PACK-7; VHFD37-14IO1
KBP04G

KBP04G

KBP04G Bridge Rectifier Diode, 1 Phase, 1.5A, 400V V(RRM), Silicon, PLASTIC, KBP, 4 PIN; KBP04G
AK80A-300L-050F40

AK80A-300L-050F40

AK80A-300L-050F40 DC-DC Regulated Power Supply Module, 1 Output, 200W, Hybrid; AK80A-300L-050F40
SI3460DDV-T1-GE3

SI3460DDV-T1-GE3

SI3460DDV-T1-GE3 Small Signal Field-Effect Transistor, 7.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6; SI3460DDV-T1-GE3
APT35GP120B2DQ2G

APT35GP120B2DQ2G

APT35GP120B2DQ2G Insulated Gate Bipolar Transistor, 96A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, T-MAX, 3 PIN; APT35GP120B2DQ2G
APTGT150DU60TG

APTGT150DU60TG

APTGT150DU60TG Insulated Gate Bipolar Transistor, 225A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP4, 12 PIN; APTGT150DU60TG
SKM121AR

SKM121AR

SKM121AR Power Field-Effect Transistor, 130A I(D), 200V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE D 15, SEMITRANS M1, 4 PIN; SKM121AR
SI3983DV-T1-E3

SI3983DV-T1-E3

SI3983DV-T1-E3 Small Signal Field-Effect Transistor, 2.1A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TSOP-6; SI3983DV-T1-E3