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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

BC557BTA

BC557BTA

BC557BTA 50 V, 100 mA PNP Bipolar Junction Epitaxial Silicon Transistor, 2000-FNFLD; BC557BTA
V48A5C400AL

V48A5C400AL

V48A5C400AL DC-DC Regulated Power Supply Module, 1 Output, 400W, Hybrid; V48A5C400AL
2MBI75UA-120

2MBI75UA-120

2MBI75UA-120 IGBT Module In-stock / Fuji Electric: 1200V 75A. Low-inductance dual package. 90-day warranty, motor drives. Global shipping. Get quote.
T507068054AQ

T507068054AQ

T507068054AQ Silicon Controlled Rectifier, 125A I(T)RMS, 125000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-94, TO-94, 3 PIN; T507068054AQ
R9G00422XX

R9G00422XX

R9G00422XX Rectifier Diode, 1 Phase, 1 Element, 3400A, 400V V(RRM), Silicon,; R9G00422XX
VI-J3T-EZ

VI-J3T-EZ

VI-J3T-EZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-J3T-EZ
MCH3245-TL-E

MCH3245-TL-E

MCH3245-TL-E Bipolar Transistor, (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single MCPH3, SC 70FL / MCPH3, 3000-REEL; MCH3245-TL-E
T1610-600G-TR

T1610-600G-TR

T1610-600G-TR 16A Logic Level Triac in D2PAK; T1610-600G-TR
SCS110KE2C

SCS110KE2C

SCS110KE2C Rectifier Diode, Schottky, 5A, 1200V V(RRM),; SCS110KE2C
APTGT200SK170D3

APTGT200SK170D3

APTGT200SK170D3 Insulated Gate Bipolar Transistor, 400A I(C), 1700V V(BR)CES, N-Channel, MODULE-7; APTGT200SK170D3