IXBT2N250 Insulated Gate Bipolar Transistor, 5A I(C), 2500V V(BR)CES, N-Channel, TO-268AA, TO-268, 3 PIN; IXBT2N250
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.