IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

PDMB150A6C

PDMB150A6C

PDMB150A6C Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel,; PDMB150A6C
MMBT6521LT1

MMBT6521LT1

MMBT6521LT1 NPN Bipolar Small Signal Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL; MMBT6521LT1
S2040R

S2040R

S2040R Silicon Controlled Rectifier, 40A I(T)RMS, 40000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN; S2040R
VI-B1T-CW

VI-B1T-CW

VI-B1T-CW DC-DC Booster Module, 100W; VI-B1T-CW
VI-J7P-IX

VI-J7P-IX

VI-J7P-IX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-J7P-IX
PP200B060

PP200B060

PP200B060 Insulated Gate Bipolar Transistor; PP200B060
1MBI400U-120

1MBI400U-120

1MBI400U-120 FUJI IGBT Module U-Series 1200V I 400A 1 in one-package
L4008D6TP

L4008D6TP

L4008D6TP 4 Quadrant Logic Level TRIAC, 400V V(DRM), 8A I(T)RMS, TO-252AA, DPAK-3; L4008D6TP
MG100Q2YK1

MG100Q2YK1

MG100Q2YK1 Power Bipolar Transistor, 100A I(C), 1-Element,; MG100Q2YK1
MDA810-16N1

MDA810-16N1

MDA810-16N1 DIODE 1342 A, 1600 V, SILICON, RECTIFIER DIODE, Rectifier Diode; MDA810-16N1