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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

170M4769

170M4769

170M4769 Electric Fuse, 900A, 700VAC, 550VDC, 200000A (IR), Inline/holder,; 170M4769
Q6016RH6TP

Q6016RH6TP

Q6016RH6TP Alternistor TRIAC, 600V V(DRM), 16A I(T)RMS, TO-220AB, TO-220AB, 3 PIN; Q6016RH6TP
MG25M2YK9

MG25M2YK9

MG25M2YK9 IGBT Module In-stock / Toshiba: 1200V 25A. High-efficiency switching. 90-day warranty, motor drive. Global fast shipping. Get quote.
PDM1102H

PDM1102H

PDM1102H Power Field-Effect Transistor, 80A I(D), 250V, 0.033ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7; PDM1102H
CM15TF-24H

CM15TF-24H

CM15TF-24H Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel; CM15TF-24H
MIXA60W1200TED

MIXA60W1200TED

MIXA60W1200TED Insulated Gate Bipolar Transistor, 85A I(C), 1200V V(BR)CES, N-Channel, SIXPACK, E2-PACK-28; MIXA60W1200TED
MCR25M

MCR25M

MCR25M Silicon Controlled Rectifier - SCR, TO-220 3 LEAD STANDARD, 50-TUBE; MCR25M
HSMP-381B-BLKG

HSMP-381B-BLKG

HSMP-381B-BLKG Pin Diode, 100V V(BR), Silicon, ROHS COMPLIANT, SC-70, 3 PIN; HSMP-381B-BLKG
L2006V5

L2006V5

L2006V5 4 Quadrant Logic Level TRIAC, 200V V(DRM), 6A I(T)RMS, TO-251, TO-251, 3 PIN; L2006V5
IRGP4069DPBF

IRGP4069DPBF

IRGP4069DPBF Insulated Gate Bipolar Transistor, 76A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3; IRGP4069DPBF