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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

T727064864DN

T727064864DN

T727064864DN Silicon Controlled Rectifier, 750A I(T)RMS, 750000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, CASE T72, 3 PIN; T727064864DN
R9G01222XX

R9G01222XX

R9G01222XX Rectifier Diode, 1 Phase, 1 Element, 3400A, 1200V V(RRM), Silicon,; R9G01222XX
PBMB300A6

PBMB300A6

PBMB300A6 Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel; PBMB300A6
SI7909DN-T1-GE3

SI7909DN-T1-GE3

SI7909DN-T1-GE3 Power Field-Effect Transistor, 5.3A I(D), 12V, 0.037ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8; SI7909DN-T1-GE3
CD411899B

CD411899B

CD411899B Rectifier Diode, 1 Phase, 2 Element, 100A, 1800V V(RRM), Silicon, POW-R-BLOK-3; CD411899B
MCD44-18IO1B

MCD44-18IO1B

MCD44-18IO1B Silicon Controlled Rectifier, 80A I(T)RMS, 49000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element, TO-240AA, TO-240AA, 5 PIN; MCD44-18IO1B
VI-20W-CY

VI-20W-CY

VI-20W-CY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-20W-CY
VSKH430-16

VSKH430-16

VSKH430-16 Silicon Controlled Rectifier, 675A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, ROHS COMPLIANT, SUPER MAGN-A-PAK-5; VSKH430-16
IXGT72N60A3

IXGT72N60A3

IXGT72N60A3 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-268AA, PLASTIC PACKAGE-3; IXGT72N60A3
EWS300-12

EWS300-12

EWS300-12 AC-DC Regulated Power Supply Module, 1 Output, 324W, Hybrid, PACKAGE-11; EWS300-12