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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

FZT458TC

FZT458TC

FZT458TC Power Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin; FZT458TC
DME201010R

DME201010R

DME201010R Small Signal Bipolar Transistor,; DME201010R
PD160F40

PD160F40

PD160F40 Silicon Controlled Rectifier, 160000mA I(T), 400V V(RRM); PD160F40
VI-B4L-IV

VI-B4L-IV

VI-B4L-IV DC-DC Booster Module, 1 Output, 150W, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-B4L-IV
SBL1630PT

SBL1630PT

SBL1630PT Rectifier Diode, Schottky, 1 Phase, 2 Element, 16A, 30V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, TO-3P, 3 PIN; SBL1630PT
170M4769

170M4769

170M4769 Electric Fuse, 900A, 700VAC, 550VDC, 200000A (IR), Inline/holder,; 170M4769
Q6016RH6TP

Q6016RH6TP

Q6016RH6TP Alternistor TRIAC, 600V V(DRM), 16A I(T)RMS, TO-220AB, TO-220AB, 3 PIN; Q6016RH6TP
MG25M2YK9

MG25M2YK9

MG25M2YK9 IGBT Module In-stock / Toshiba: 1200V 25A. High-efficiency switching. 90-day warranty, motor drive. Global fast shipping. Get quote.
PDM1102H

PDM1102H

PDM1102H Power Field-Effect Transistor, 80A I(D), 250V, 0.033ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7; PDM1102H
CM15TF-24H

CM15TF-24H

CM15TF-24H Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel; CM15TF-24H