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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

HSMP-381B-BLKG

HSMP-381B-BLKG

HSMP-381B-BLKG Pin Diode, 100V V(BR), Silicon, ROHS COMPLIANT, SC-70, 3 PIN; HSMP-381B-BLKG
L2006V5

L2006V5

L2006V5 4 Quadrant Logic Level TRIAC, 200V V(DRM), 6A I(T)RMS, TO-251, TO-251, 3 PIN; L2006V5
IRGP4069DPBF

IRGP4069DPBF

IRGP4069DPBF Insulated Gate Bipolar Transistor, 76A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3; IRGP4069DPBF
VS-122NQ030PBF

VS-122NQ030PBF

VS-122NQ030PBF Rectifier Diode, Schottky, 1 Phase, 1 Element, 30V V(RRM), Silicon, ROHS COMPLIANT, D-67, HALF PAK-1; VS-122NQ030PBF
DSA7503R0L

DSA7503R0L

DSA7503R0L Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-243AA, HALOGEN FREE AND ROHS COMPLIANT, MINIP3-F2-B, TO-243, SC-62, 3 PIN; DSA7503R0L
PD471807

PD471807

PD471807 Silicon Controlled Rectifier, 1775A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 1 Element, POW-R-BLOK-5; PD471807
DF2005ST-G

DF2005ST-G

DF2005ST-G Bridge Rectifier Diode, 1 Phase, 2A, 50V V(RRM), Silicon,; DF2005ST-G
SW18DXC26C

SW18DXC26C

SW18DXC26C DIODE 5843 A, 1800 V, SILICON, RECTIFIER DIODE, Rectifier Diode; SW18DXC26C
APTGT200DA170D3

APTGT200DA170D3

APTGT200DA170D3 Insulated Gate Bipolar Transistor, 400A I(C), 1700V V(BR)CES, N-Channel, MODULE-7; APTGT200DA170D3
SBR10200CTL-13

SBR10200CTL-13

SBR10200CTL-13 Rectifier Diode, 1 Phase, 2 Element, 5A, 200V V(RRM), Silicon, TO-252, GREEN, PLASTIC PACKAGE-3/2; SBR10200CTL-13