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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-J0F-IX

VI-J0F-IX

VI-J0F-IX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-J0F-IX
D66DS5

D66DS5

D66DS5 Power Bipolar Transistor, 20A I(C), 1-Element; D66DS5
MP5010W

MP5010W

MP5010W MCC 1 Phase, 50A, 1000V V(RRM), Silicon, PLASTIC, MP-50W, 4 PIN
MIXA10WB1200TML

MIXA10WB1200TML

MIXA10WB1200TML Insulated Gate Bipolar Transistor, 17A I(C), 1200V V(BR)CES, N-Channel, E1-PACK-25; MIXA10WB1200TML
T72H024844DN

T72H024844DN

T72H024844DN Silicon Controlled Rectifier, 750A I(T)RMS, 750000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, T72, 3 PIN; T72H024844DN
CPT20015

CPT20015

CPT20015 Rectifier Diode, Schottky, 1 Phase, 2 Element, 100A, 15V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2; CPT20015
2SD1760TLQ

2SD1760TLQ

2SD1760TLQ Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SC-63, 3 PIN; 2SD1760TLQ
2N6426RLRA

2N6426RLRA

2N6426RLRA NPN Bipolar Darlington Transistor, TO-92 (TO-226) 5.33mm Body Height, 2000-REEL; 2N6426RLRA
VI-2TV-CX

VI-2TV-CX

VI-2TV-CX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-2TV-CX
J310ZL1G

J310ZL1G

J310ZL1G N-Channel JFET Transistor, 25 V, TO-92 (TO-226) 5.33mm Body Height, 2000-FNFLD; J310ZL1G