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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

EC103M2RP

EC103M2RP

EC103M2RP Silicon Controlled Rectifier, 0.8A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3; EC103M2RP
VI-JWD-EY

VI-JWD-EY

VI-JWD-EY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-JWD-EY
APT50GR120L

APT50GR120L

APT50GR120L Insulated Gate Bipolar Transistor, 117A I(C), 1200V V(BR)CES, N-Channel; APT50GR120L
VI-2T3-CW

VI-2T3-CW

VI-2T3-CW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-2T3-CW
MBR12045CTR

MBR12045CTR

MBR12045CTR 45V 120A Silicon Schottky Rectifier in Twin Tower Package; MBR12045CTR
MPSA44RL1G

MPSA44RL1G

MPSA44RL1G High Voltage NPN Bipolar Transistor, TO-92 (TO-226) 5.33mm Body Height, 2000-REEL; MPSA44RL1G
CD631215

CD631215

CD631215 Silicon Controlled Rectifier, 250A I(T)RMS, 150000mA I(T), 1200V V(DRM), 1200V V(RRM), 2 Element, POW-R-BLOK-7; CD631215
VI-J0D-IY

VI-J0D-IY

VI-J0D-IY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-J0D-IY
VI-B1L-CW

VI-B1L-CW

VI-B1L-CW DC-DC Booster Module, 1 Output, 100W, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-B1L-CW
FZT757TC

FZT757TC

FZT757TC Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin; FZT757TC