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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

ATF-38143-TR2G

ATF-38143-TR2G

ATF-38143-TR2G RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 4 PIN; ATF-38143-TR2G
SW16HHR320

SW16HHR320

SW16HHR320 DIODE 320 A, 1600 V, SILICON, RECTIFIER DIODE, Rectifier Diode; SW16HHR320
R6220655ESOO

R6220655ESOO

R6220655ESOO Rectifier Diode, 1 Phase, 1 Element, 550A, 600V V(RRM), Silicon,; R6220655ESOO
VI-2WK-IY

VI-2WK-IY

VI-2WK-IY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-2WK-IY
MJ15001G

MJ15001G

MJ15001G 15 A, 140 V, NPN Bipolar Power Transistor, TO-204 (TO-3), 100-FTRAY; MJ15001G
VI-22R-EW

VI-22R-EW

VI-22R-EW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid, MODULE-9; VI-22R-EW
SMV1270-079LF

SMV1270-079LF

SMV1270-079LF Variable Capacitance Diode, S Band, 23.6pF C(T), 20V, Silicon, Hyperabrupt, GREEN, ULTRA SMALL, SC-79, 2 PIN; SMV1270-079LF
PN2222G

PN2222G

PN2222G General Purpose Transistor, TO-92 (TO-226) 5.33mm Body Height, 5000-BLKBX; PN2222G
SST2907AT116

SST2907AT116

SST2907AT116 Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, SST3, 3 PIN; SST2907AT116
VI-BAMD-CM

VI-BAMD-CM

VI-BAMD-CM AC-DC Power Factor Correction Module, 2 Output, 600W, Hybrid,; VI-BAMD-CM