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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

CM300DU-34KA

CM300DU-34KA

CM300DU-34KA Insulated Gate Bipolar Transistor, 300A I(C), 1700V V(BR)CES, N-Channel,; CM300DU-34KA
RS405GL-BP

RS405GL-BP

RS405GL-BP Bridge Rectifier Diode, 1 Phase, 4A, 600V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, RS-4L, 4 PIN; RS405GL-BP
FMC6G50US60

FMC6G50US60

FMC6G50US60 Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, 21PM-BA, 21 PIN; FMC6G50US60
EMD30T2R

EMD30T2R

EMD30T2R Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, EMT6, 6 PIN; EMD30T2R
NTMS5835NLR2G

NTMS5835NLR2G

NTMS5835NLR2G Power MOSFET 40V 12A 10 mOhm Single N-Channel SO-8 Logic Level, SOIC-8 Narrow Body, 2500-REEL; NTMS5835NLR2G
T507108054AQ

T507108054AQ

T507108054AQ Silicon Controlled Rectifier, 125A I(T)RMS, 125000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-94, TO-94, 3 PIN; T507108054AQ
PKL4110API

PKL4110API

PKL4110API DC-DC Regulated Power Supply Module, 1 Output, 198W, Hybrid; PKL4110API
VI-J4J-EZ

VI-J4J-EZ

VI-J4J-EZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-J4J-EZ
MB108-BP

MB108-BP

MB108-BP Bridge Rectifier Diode, 1 Phase, 10A, 800V V(RRM), Silicon, BR-6, 4 PIN; MB108-BP
DXT2011P5-13

DXT2011P5-13

DXT2011P5-13 Small Signal Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, GREEN, PLASTIC, 3 PIN; DXT2011P5-13