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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

DMN601DMK-7

DMN601DMK-7

DMN601DMK-7 Small Signal Field-Effect Transistor, 0.305A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC PACKAGE-6; DMN601DMK-7
V24A28T400AL2

V24A28T400AL2

V24A28T400AL2 DC-DC Regulated Power Supply Module, 1 Output, 400W, Hybrid; V24A28T400AL2
SKT431F10DT

SKT431F10DT

SKT431F10DT Silicon Controlled Rectifier, 1100A I(T)RMS, 430000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB; SKT431F10DT
VI-24B-EX

VI-24B-EX

VI-24B-EX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-24B-EX
1DI200M-120

1DI200M-120

1DI200M-120 Power Bipolar Transistor, 200A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 5 Pin; 1DI200M-120
VI-25Y-EV

VI-25Y-EV

VI-25Y-EV DC-DC Regulated Power Supply Module, 1 Output, Hybrid,; VI-25Y-EV
AON7611

AON7611

AON7611 Transistor; AON7611
DSA70C200HB

DSA70C200HB

DSA70C200HB Rectifier Diode, Schottky, 35A, 200V, TO-247AD, ROHS COMPLIANT, PLASTIC PACKAGE-3
MRF6S9060NR1

MRF6S9060NR1

MRF6S9060NR1 RF Power Field-Effect Transistor; MRF6S9060NR1
APTGT75X120RTP3

APTGT75X120RTP3

APTGT75X120RTP3 Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, MODULE-35; APTGT75X120RTP3