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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

STTH16L06CT

STTH16L06CT

STTH16L06CT 600 V, 16 A dual Low Drop Ultrafast Diode; STTH16L06CT
CS8-08IO2

CS8-08IO2

CS8-08IO2 Silicon Controlled Rectifier, 25A I(T)RMS, 16000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-64, TO-64, 2 PIN; CS8-08IO2
NXP3875YR

NXP3875YR

NXP3875YR NXP3875Y; NXP3875G - 50 V, 150 mA NPN general-purpose transistors TO-236 3-Pin; NXP3875YR
2SA1694

2SA1694

2SA1694 Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, MT-100, TO-3P, 3 PIN; 2SA1694
KSD560R

KSD560R

KSD560R Power Bipolar Transistor; KSD560R
VI-22X-IY

VI-22X-IY

VI-22X-IY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-22X-IY
VI-B3R-IU

VI-B3R-IU

VI-B3R-IU DC-DC Booster Module, 1 Output, 200W, Hybrid, PACKAGE-9; VI-B3R-IU
ARF1510

ARF1510

ARF1510 RF Power Field-Effect Transistor, 4-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC PACKAGE-10; ARF1510
AON2880

AON2880

AON2880 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET; AON2880
CN611216B

CN611216B

CN611216B Rectifier Diode, 1 Phase, 2 Element, 160A, 1200V V(RRM), Silicon, POW-R-BLOK-3; CN611216B