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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

FBA75BA50

FBA75BA50

FBA75BA50 Power Field-Effect Transistor, 2-Element, Metal-oxide Semiconductor FET; FBA75BA50
VI-J3J-EW

VI-J3J-EW

VI-J3J-EW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid, HALF BRICK PACKAGE-9; VI-J3J-EW
VS-SD1700C24K

VS-SD1700C24K

VS-SD1700C24K Rectifier Diode, 1 Phase, 1 Element, 2080A, 2400V V(RRM), Silicon, DO-200AC,; VS-SD1700C24K
KBPC5008W-G

KBPC5008W-G

KBPC5008W-G Bridge Rectifier Diode, 50A, 800V V(RRM),; KBPC5008W-G
T72H124544DN

T72H124544DN

T72H124544DN Silicon Controlled Rectifier, 700A I(T)RMS, 700000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, CASE T72, 3 PIN; T72H124544DN
VI-J5W-IY

VI-J5W-IY

VI-J5W-IY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-J5W-IY
IXGN200N60A

IXGN200N60A

IXGN200N60A Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MINIBLOC-4; IXGN200N60A
AON2801

AON2801

AON2801 Power Field-Effect Transistor,; AON2801
T72H144554DN

T72H144554DN

T72H144554DN Silicon Controlled Rectifier, 700A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, CASE T72, 3 PIN; T72H144554DN
IXGT40N120B2D1

IXGT40N120B2D1

IXGT40N120B2D1 Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, TO-268AA, PLASTIC, TO-268, 3 PIN; IXGT40N120B2D1