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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

DTB513ZETL

DTB513ZETL

DTB513ZETL Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SC-75A, EMT3, 3 PIN; DTB513ZETL
MSDM50-16

MSDM50-16

MSDM50-16 Bridge Rectifier Diode, 3 Phase, 50A, 1600V V(RRM), Silicon, CASE M2-1, 5 PIN; MSDM50-16
5SNA2400E120100

5SNA2400E120100

5SNA2400E120100 Insulated Gate Bipolar Transistor, 2400A I(C), 1200V V(BR)CES, N-Channel, HIPAK-9; 5SNA2400E120100
LD411060

LD411060

LD411060 Rectifier Diode, 1 Phase, 2 Element, 600A, 1000V V(RRM), Silicon, POW-R-BLOK-3; LD411060
FJPF5200RTU

FJPF5200RTU

FJPF5200RTU Power Bipolar Transistor; FJPF5200RTU
PS21254

PS21254

PS21254 AC Motor Controller, 30A, Hybrid, LEAD FREE, POWER, MODULE, DIP-26; PS21254
DIM600DCM17-A

DIM600DCM17-A

DIM600DCM17-A Insulated Gate Bipolar Transistor, 600A I(C), 1700V V(BR)CES, N-Channel, PLASTIC, D, 7 PIN; DIM600DCM17-A
C350D

C350D

C350D Silicon Controlled Rectifier, 180.55A I(T)RMS, 112000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, T62, 3 PIN; C350D
J112

J112

J112 N-Channel JFET Transistor, 35 V, 10000-BLKBG; J112
APT25GR120B

APT25GR120B

APT25GR120B Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel; APT25GR120B