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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

PE110FG160

PE110FG160

PE110FG160 Silicon Controlled Rectifier, 110000mA I(T), 1600V V(RRM); PE110FG160
ZUS15053R3

ZUS15053R3

ZUS15053R3 DC-DC Regulated Power Supply Module, 1 Output, 6.6W, Hybrid, ROHS COMPLIANT PACKAGE-6; ZUS15053R3
2N3904RLRPG

2N3904RLRPG

2N3904RLRPG NPN Bipolar Transistor, TO-92 40 V, 0.2 A, TO-92 (TO-226) 5.33mm Body Height, 2000-FNFLD; 2N3904RLRPG
PE130FG40

PE130FG40

PE130FG40 Silicon Controlled Rectifier, 130000mA I(T), 400V V(RRM); PE130FG40
ATF-531P8-BLK

ATF-531P8-BLK

ATF-531P8-BLK RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, PLASTIC, DFP-N, LCC-8; ATF-531P8-BLK
T90RIA12

T90RIA12

T90RIA12 Silicon Controlled Rectifier,; T90RIA12
V375C48C150AN

V375C48C150AN

V375C48C150AN DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid; V375C48C150AN
BC847CLT3G

BC847CLT3G

BC847CLT3G NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL; BC847CLT3G
VI-JTJ-IX

VI-JTJ-IX

VI-JTJ-IX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-JTJ-IX
IRKT230-12

IRKT230-12

IRKT230-12 Silicon Controlled Rectifier, 510A I(T)RMS, 230000mA I(T), 1200V V(DRM), 1200V V(RRM), 2 Element, MAGN-A-PAK-5; IRKT230-12