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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-2WL-CV

VI-2WL-CV

VI-2WL-CV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid, MODULE-9; VI-2WL-CV
IXGK72N60B3H1

IXGK72N60B3H1

IXGK72N60B3H1 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN; IXGK72N60B3H1
MDMA50P1200TG

MDMA50P1200TG

MDMA50P1200TG Rectifier Diode, 1 Phase, 2 Element, 50A, 1200V V(RRM), Silicon, TO-240AA, ROHS COMPLIANT PACKAGE-3; MDMA50P1200TG
VI-J7T-CX

VI-J7T-CX

VI-J7T-CX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-J7T-CX
APTGF150DU120TG

APTGF150DU120TG

APTGF150DU120TG Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP4, MODULE-12; APTGF150DU120TG
VI-B5Z-IV

VI-B5Z-IV

VI-B5Z-IV DC-DC Booster Module, 1 Output, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-B5Z-IV
IEF260A2

IEF260A2

IEF260A2 Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, MODULE-17; IEF260A2
PPD10-5-1212

PPD10-5-1212

PPD10-5-1212 Analog Circuit,; PPD10-5-1212
IXFN80N50Q2

IXFN80N50Q2

IXFN80N50Q2 Power Field-Effect Transistor, 80A I(D), 500V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC, 4 PIN; IXFN80N50Q2
T7H8147504DN

T7H8147504DN

T7H8147504DN Silicon Controlled Rectifier, 1260A I(T)RMS, 1400V V(RRM), 1 Element, HERMETIC SEALED PACKAGE-3; T7H8147504DN