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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-BN0-IW

VI-BN0-IW

VI-BN0-IW DC-DC Booster Module, 100W, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9
MCD220-16io1

MCD220-16io1

MCD220-16io1 Silicon Controlled Rectifier, 400A I(T)RMS, 181000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element, MODULE-5; MCD220-16io1
B674-2T

B674-2T

B674-2T Silicon Controlled Rectifier, 1200V V(RRM), 1 Element, ROHS COMPLIANT PACKAGE-4; B674-2T
T607081854BT

T607081854BT

T607081854BT Silicon Controlled Rectifier, 275A I(T)RMS, 275000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-93, TO-93, 3 PIN; T607081854BT
BC817-16LT1

BC817-16LT1

BC817-16LT1 NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL; BC817-16LT1
DRA2533Q0L

DRA2533Q0L

DRA2533Q0L Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PIN; DRA2533Q0L
PP200T120

PP200T120

PP200T120 Insulated Gate Bipolar Transistor; PP200T120
VI-211-IU

VI-211-IU

VI-211-IU DC-DC Regulated Power Supply Module, 1 Output, 200W, Hybrid, MODULE-9; VI-211-IU
NSVT489AMT1G

NSVT489AMT1G

NSVT489AMT1G 30 V, 2.0 A NPN Low VCE(sat) Bipolar Transistor, TSOP-6, 3000-REEL; NSVT489AMT1G
APT200GT60JRDQ4

APT200GT60JRDQ4

APT200GT60JRDQ4 Insulated Gate Bipolar Transistor, 195A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, ISOTOP-4; APT200GT60JRDQ4