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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-2NW-EW

VI-2NW-EW

VI-2NW-EW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-2NW-EW
VI-B7K-IV

VI-B7K-IV

VI-B7K-IV DC-DC Booster Module; VI-B7K-IV
1SS226-TP

1SS226-TP

1SS226-TP Rectifier Diode, 2 Element, 0.1A, Silicon, LEAD FREE, PLASTIC PACKAGE-3; 1SS226-TP
IRKL500-08

IRKL500-08

IRKL500-08 Silicon Controlled Rectifier, 785A I(T)RMS, 500000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, SUPER MAGN-A-PAK-4; IRKL500-08
VI-B5P-EU

VI-B5P-EU

VI-B5P-EU DC-DC Booster Module, 1 Output, 200W, Hybrid, PACKAGE-9; VI-B5P-EU
2SC5888

2SC5888

2SC5888 10A, 50V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220ML, 3 PIN; 2SC5888
IRG7PH50K10D-EPBF

IRG7PH50K10D-EPBF

IRG7PH50K10D-EPBF Insulated Gate Bipolar Transistor, 90A I(C), 1200V V(BR)CES, N-Channel; IRG7PH50K10D-EPBF
T627041574DN

T627041574DN

T627041574DN Silicon Controlled Rectifier, 235A I(T)RMS, 235000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, CASE T62, 3 PIN; T627041574DN
MBRB10100CT-TP

MBRB10100CT-TP

MBRB10100CT-TP Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, D2PAK-3; MBRB10100CT-TP
2N5064RLRM

2N5064RLRM

2N5064RLRM 0.8A, 200V, SCR, TO-92, PLASTIC, CASE 29-11, TO-226AA, 3 PIN; 2N5064RLRM