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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

2SB1124S-TD-E

2SB1124S-TD-E

2SB1124S-TD-E Bipolar Transistor, (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single PCP, SOT-89 / PCP-1, 1000-REEL; 2SB1124S-TD-E
TN1515-600B-TR

TN1515-600B-TR

TN1515-600B-TR 15 A 600 V standard SCR Thyristor in DPAK; TN1515-600B-TR
VI-21N-EY

VI-21N-EY

VI-21N-EY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-21N-EY
2SD2662T100

2SD2662T100

2SD2662T100 Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SC-62, 3 PIN; 2SD2662T100
HSMP-3815-TR1G

HSMP-3815-TR1G

HSMP-3815-TR1G Pin Diode, 100V V(BR),; HSMP-3815-TR1G
IRG4PH50UDPBF

IRG4PH50UDPBF

IRG4PH50UDPBF Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3; IRG4PH50UDPBF
FCA50CC50

FCA50CC50

FCA50CC50 Power Field-Effect Transistor, 2-Element, Metal-oxide Semiconductor FET; FCA50CC50
2SD1867TV2

2SD1867TV2

2SD1867TV2 Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, ATV, 3 PIN; 2SD1867TV2
VI-JWW-CY

VI-JWW-CY

VI-JWW-CY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-JWW-CY
T5071040B4AQ

T5071040B4AQ

T5071040B4AQ Silicon Controlled Rectifier, 63A I(T)RMS, 63000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-94, TO-94, 3 PIN; T5071040B4AQ