MITSUBISHI PS11032-y1 IGBT Module

INTEGRATED FUNCTIONS AND FEATURES • Converter bridge for 3 phase AC-to-DC power conversion. • 3 phase IGBT inverter bridge configured by the latest 3rd. generation IGBT and diode technology. • Inverter output current capability IO (Note 1): (Note 1) : The inverter output current is assumed to be sinusoidal and the peak current value of each of the above loading cases is defined as : IOP = IO × √2, TC < 100°C INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS: • P-Side IGBTs : Drive circuit, high-level-shift circuit, bootstrap circuit supply scheme for Single Control-Power-Source drive, and under voltage (UV) protection. • N-Side IGBTs : Drive circuit, DC-Link current sense and amplifier circuits for overcurrent protection, control-supply under-voltage protection (UV), and fault output (FO) signaling circuit. • Fault Output : N-side IGBT short circuit (SC), over-current (OC), and control supply under-voltage (UV). • Inverter Analog Current Sense : N-Side IGBT DC-Link Current Sense. • Input Interface : 5V CMOS/TTL compatible, Schmitt Trigger input, and Arm-Shoot-Through interlock protective function. Supply voltage VCC 450V Supply voltage (surge) VCC(surge) 500V Each IGBT collector current ±Ic(±Icp) ±4 (±8) A Repetitive peak reverse voltage VRRM 800V Recommended AC input voltage Ea 220 Vrms DC output current IO 10A Surge (non-repetitive) forward current IFSM 100A Supply voltage VD, VDB –0.5 ~ 20V Input signal voltage VCIN –0.5 ~ +7.5 V Fault output current IFO 15mA   TYPE INSULATED TYPE 450V-500V/4A-8ADC 10A