#MITSUBISHI, #QM15TD_H, #IGBT_Module, #IGBT, QM15TD-H Power Bipolar Transistor, 15A I(C), 6-Element, NPN, Silicon, Plastic/Epoxy, 17 Pin,; QM15TD-H
Manufacturer Part Number: QM15TD-HPart Life Cycle Code: ActiveIhs Manufacturer: Mitsubishi ELECTRIC CORPPackage Description: FLANGE MOUNT, R-PUFM-D17Manufacturer: Mitsubishi ElectricRisk Rank: 5.67Collector Current-Max (IC): 15 AConfiguration: COMPLEXDC Current Gain-Min (hFE): 75Fall Time-Max (tf): 3000 nsJESD-30 Code: R-PUFM-D17Number of Elements: 6Number of Terminals: 17Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNQualification Status: Not QualifiedSubcategory: BIP General Purpose PowerSurface Mount: NOTerminal Form: SOLDER LUGTerminal Position: UPPERTransistor Element Material: SILICONVCEsat-Max: 2 V Power Bipolar Transistor, 15A I(C), 6-Element, NPN, Silicon, Plastic/Epoxy, 17 Pin,