Content last revised on December 28, 2025
Mitsubishi RM10TA-2H Three-Phase Diode Bridge Rectifier | 1600V 20A Module
The Mitsubishi RM10TA-2H is a high-voltage three-phase diode bridge rectifier module designed to provide a robust AC-to-DC conversion stage for industrial power systems. Delivering a repetitive peak reverse voltage of 1600V and an average rectified output current of 20A, this module serves as a critical front-end component for 400V-class motor drives and general-purpose inverters. It eliminates the need for complex discrete diode layouts by integrating six high-performance silicon rectifiers into a single electrically isolated package. For engineers prioritizing system reliability in harsh electrical environments, this 1600V rating offers a significant safety margin against line voltage transients. For systems requiring higher current handling, the related RM50TC-2H provides a Vces of 1600V with a 50A rating.
Technical Specifications and Ratings
Functional Grouping of Electrical and Thermal Data
The following technical data is based on the official Mitsubishi Electric power semiconductor documentation to support precise engineering evaluation.
| Electrical Absolute Maximum Ratings | ||
|---|---|---|
| Symbol | Parameter Description | Rating Value |
| V_RRM | Repetitive Peak Reverse Voltage | 1600 V |
| V_RSM | Non-Repetitive Peak Reverse Voltage | 1700 V |
| I_O | Average Rectified Output Current (3-Phase) | 20 A (Tc=110°C) |
| I_FSM | Surge Forward Current (60Hz, 1 cycle) | 400 A |
| I²t | I²t for Fusing (8.3ms) | 670 A²s |
| Isolation and Thermal Characteristics | ||
| V_iso | Isolation Voltage (Main Terminal to Case) | 2500 V (AC 1 min) |
| Rth(j-c) | Thermal Resistance (Junction to Case) | 0.55 °C/W (Per Diode) |
| T_j | Operating Junction Temperature | -40 to +150 °C |
Download the RM10TA-2H datasheet for detailed specifications and performance curves.
Application Scenarios & Engineering Value
Optimizing Power Quality in Industrial Motor Control
In the architecture of a Variable Frequency Drive (VFD), the RM10TA-2H functions as the primary rectification stage. A common challenge for engineers is managing the inductive kickback and line surges typical in heavy industrial grids. The 1600V peak reverse voltage (V_RRM) acting on this module is comparable to a high-capacity dam wall; even when the normal water level (operating voltage) is lower, the height of the dam protects the downstream electronics from unexpected surges that would otherwise cause catastrophic failure.
This high-voltage headroom is particularly valuable in general-purpose inverters and welding power supplies where electrical noise and transients are frequent. By utilizing an electrically isolated baseplate with a 2500V insulation rating, the RM10TA-2H simplifies thermal management, allowing engineers to mount multiple modules on a single common heatsink without additional insulating washers. This integration directly supports the design of high-density power converters used in PFC stages and battery chargers. For a deeper understanding of how these components integrate into larger systems, consult our analysis of IGBT modules.
Frequently Asked Questions
Engineering Insights for System Implementation
How does the 1600V VRRM rating of the RM10TA-2H benefit 440V AC industrial designs?
In a 440V AC system, the peak line voltage is approximately 622V. However, switching transients and inductive loads can easily double this voltage. The 1600V rating provides a safety factor of over 2.5x, significantly reducing the risk of avalanche breakdown compared to standard 800V or 1200V rectifiers. This contributes to a lower Total Cost of Ownership (TCO) by preventing premature field failures.
Why is the 400A Surge Forward Current (IFSM) rating critical for motor drive startups?
When a motor drive is first energized, the DC link capacitors act as a momentary short circuit, drawing a high inrush current. The RM10TA-2H is rated to withstand a non-repetitive surge of 400A for a full cycle. This high-surge capability ensures the module can handle the charging current of the DC bus without necessitating oversized soft-start resistors.
What is the primary benefit of the isolated baseplate design?
The 2500V isolation between the internal diode circuitry and the baseplate allows for direct mounting to a metallic chassis or heatsink. This eliminates the thermal bottleneck of external mica or silicone insulators, resulting in improved heat dissipation and smaller overall system footprints.
Technical & Design Deep Dive
A Closer Look at the Three-Phase Bridge Architecture
The internal topology of the RM10TA-2H consists of six diffused silicon diodes arranged in a standard three-phase bridge configuration. This setup can be visualized as a high-speed electrical roundabout, where AC current enters from three different directions and is forced into a singular, unidirectional DC path. The diffused junction technology used by Mitsubishi ensures a low forward voltage drop, which minimizes conduction losses.
Thermal stability is maintained through the module's 0.55 °C/W junction-to-case thermal resistance. To maximize the longevity of the module, designers should calculate the heatsink requirements based on the maximum expected 20A load and ambient temperature. Understanding the balance between current density and thermal dissipation is essential for maintaining 10-year reliability in mission-critical hardware. For more on this, explore our guide on thermal management and selection.
Industry Insights & Strategic Advantage
Alignment with Modern Power Conversion Standards
As global industries transition toward Industrial 4.0 and higher energy efficiency standards, the demand for robust power conversion front-ends has intensified. The RM10TA-2H aligns with these trends by providing a reliable, low-loss rectification stage that complies with international safety standards like IEC 61800-3 for adjustable speed drives. Its compact "TA" package format has become an industry staple, ensuring mechanical compatibility and simplifying supply chain logistics for OEM manufacturers.
While newer wide-bandgap materials like Silicon Carbide (SiC) are gaining traction in high-frequency switching, traditional silicon diode bridges remain the most cost-effective and reliable choice for the primary rectification of standard 50/60Hz grids. The RM10TA-2H represents a strategic balance of proven performance and electrical ruggedness, making it a "best fit" for industrial environments where grid quality is unpredictable and durability is paramount.
To secure a technical consultation or a quote for your production requirements, please contact our technical sales team today for current lead times and engineering support.
