#MITSUBISHI, #SKD40GAL123D, #IGBT_Module, #IGBT, SKD40GAL123D Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, CASE D69A, 18 PIN; SKD40GAL123D
Manufacturer Part Number: SKD40GAL123DPart Life Cycle Code: ObsoleteIhs Manufacturer: Semikron INTERNATIONALPart Package Code: DO-204Package Description: FLANGE MOUNT, R-XUFM-X7Pin Count: 2Manufacturer Package Code: CASE D69AManufacturer: SemikronRisk Rank: 5.84Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 40 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMPLEXJESD-30 Code: R-XUFM-X7Number of Elements: 1Number of Terminals: 7Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 400 nsTurn-on Time-Nom (ton): 70 ns Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, CASE D69A, 18 PIN