Content last revised on January 14, 2026
Semikron SKM150GAH12E4DKLT | High-Frequency Trench 4 IGBT for Demanding Inverters
The Semikron SKM150GAH12E4DKLT is a 1200V, 150A half-bridge IGBT module engineered for power conversion systems where efficiency, speed, and reliability are non-negotiable. Housed in the robust SEMITRANS® 2 package, this module leverages Semikron's advanced 4th generation trench gate field-stop technology to deliver a superior balance of conduction and switching performance. It is an ideal solution for engineers designing high-frequency applications that push the boundaries of power density and thermal management.
- Core Technology: Features Trench Gate Field-Stop IGBT4, optimized for lower total losses in high-frequency operation.
- Integrated Diode: Incorporates a soft-recovery CAL 4 (Controlled Axial Lifetime) freewheeling diode, minimizing EMI and voltage overshoot.
- Advanced Control: Includes an auxiliary Kelvin Emitter connection for highly accurate and interference-free gate control.
- Robust Packaging: Built on an insulated copper baseplate (Al2O3 DCB) for excellent thermal conductivity and high electrical isolation.
Technical Deep Dive: The Engineering Advantage
The performance of the SKM150GAH12E4DKLT is rooted in two critical silicon technologies. First, the 4th generation Trench Field-Stop IGBT (IGBT4) is engineered to solve the classic trade-off between saturation voltage (Vce(sat)) and turn-off energy (Eoff). By optimizing the carrier profile, this technology achieves a low Vce(sat) to minimize conduction losses while simultaneously enabling fast switching to reduce losses during state transitions. For a design engineer, this directly translates to higher inverter efficiency and a reduced need for bulky heatsinks, enabling more compact system designs.
Complementing the IGBT is the CAL 4 freewheeling diode. In hard-switched applications, a diode's reverse recovery behavior is a primary source of electromagnetic interference (EMI) and voltage stress on the switch. The CAL 4 diode is designed for "soft" recovery, meaning it exhibits a smooth, controlled turn-off current profile. This dramatically reduces voltage overshoots and high-frequency ringing, simplifying snubber circuit design and easing the path to EMC compliance. This synergy makes the module exceptionally well-suited for systems where both efficiency and electromagnetic compatibility are critical design criteria.
Application Scenarios & Value Proposition
The specific characteristics of the SKM150GAH12E4DKLT make it a standout performer in several demanding applications:
- High-Frequency Industrial Inverters: In applications like industrial welding and induction heating, switching frequencies can exceed 20 kHz. The module's low switching losses are paramount here, directly improving efficiency and allowing for smaller, lighter magnetic components.
- Solar & PV Inverters: Maximizing energy harvest requires the highest possible conversion efficiency. The low total power loss of this IGBT module ensures that more of the generated DC power is successfully converted to usable AC power, increasing the system's overall return on investment.
- Uninterruptible Power Supplies (UPS): Reliability is the key metric for UPS systems. The robust thermal design and the soft-recovery CAL 4 diode contribute to a longer operational lifespan and stable performance, protecting critical loads from power disturbances. The inclusion of a Kelvin Emitter allows for precise gate control, preventing spurious turn-on events that could compromise system integrity.
Key Parameter Overview
The following table outlines the essential electrical and thermal specifications for design engineers. For a complete set of characteristics and performance curves, please refer to the official datasheet.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (V_CES) | 1200 V |
| Continuous DC Collector Current (I_C,nom / I_C @ 80°C) | 150 A / 115 A |
| Collector-Emitter Saturation Voltage (V_CE(sat), typ. @ 150 A, 25°C) | 1.70 V |
| Short Circuit Withstand Time (t_psc @ V_CC ≤ 800V, T_j = 150°C) | 10 µs |
| Turn-Off Energy (E_off, typ. @ 150 A, 25°C) | 10.5 mJ |
| Thermal Resistance, Junction to Case (R_th(j-c), per IGBT) | 0.19 K/W |
| Maximum Junction Temperature (T_j,max) | 175 °C (150 °C operating) |
For detailed operational graphs and application notes, you can download the Semikron SKM150GAH12E4DKLT datasheet.
Frequently Asked Questions (FAQ)
What is the primary benefit of the Kelvin Emitter pin on this module?The Kelvin Emitter provides a dedicated, low-inductance return path for the gate drive circuit, separate from the high-current power emitter terminal. This prevents stray inductance in the power path from inducing voltage drops that could distort the gate-emitter voltage (Vge). The result is cleaner, faster, and more reliable switching, reduced risk of parasitic turn-on, and improved performance when paralleling modules.
How does this IGBT4 module improve upon older generation IGBTs?Compared to older Non-Punch-Through (NPT) or earlier trench-gate IGBT modules, the Trench 4 Field-Stop technology in the SKM150GAH12E4DKLT offers a significantly better trade-off between conduction losses (lower Vce(sat)) and switching speed (lower Eoff). This means for a given current rating, it runs cooler and more efficiently, especially at higher frequencies (above 8-10 kHz). This allows designers to either increase the power output in an existing footprint or shrink the overall size of the power conversion stage.
