Superfast NPT-IGBT Module|
•N channel, homogeneous Silicon structure (NPT-Non Punch-Through IGBT)
•Low tail current with low temperature dependence|•High short circuit capability, self limiting if term. G is clamped to E
•Pos. temp. coeff. of Vce(sat)
•50 % less turn off loses
•30 % less short circuit current
•Very low Cies, Coes, Cres
•Latch-up free
•Fast & soft inverse CAL diodes
•Isolated copper Bonding Technology without hard mould
•Large clearance (10 mm) and creepage distances (20 mm)
Typical Applications:
•Switching (not for linear use) •Switched mode power supplies •UPS •AC inverter servo drives •Pulse frequencies also above 10 kHz •Welding inverters
Configuration Half Bridge
Voltage 600 V
Current 200 A
Package Type Semitrans 3
Semikron POWER IGBT TRANSISTOR
