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Infineon TD320N16S0F New IGBT Module

#Infineon, #TD320N16S0F, #IGBT_Module, #IGBT, SCR Module 1.6 kV 520 A Series Connection - SCR/Diode Surface Mount Module THYRISTOR MODULE 1600V 320A

· Categories: IGBT Module
· Manufacturer: Infineon
· Price: US$ 150
· Date Code: 2022+
. Available Qty: 149
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Email: sales@shunlongwei.com
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TD320N16S0F Specification

Sell TD320N16S0F, #Infineon #TD320N16S0F New Stock, SCR Module 1.6 kV 520 A Series Connection - SCR/Diode Surface Mount Module THYRISTOR MODULE 1600V 320A , #IGBT_Module, #IGBT, #TD320N16S0F
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/td320n16s0f.html

Infineon TD320N16S0F is high-power IGBT (Insulated Gate Bipolar Transistor) module designed for industrial applications for where require high power density and efficiency.

TD320N16S0F has voltage rating 1600V and current rating 320A, with maximum power dissipation 3600W.

the low switching losses, high reliability, and ruggedness, widely use in motor drives, welding machines, and UPS systems.

TD320N16S0F built-in NTC temperature sensor for temperature monitoring, ensuring safe and reliable operation. The module is designed with a dual screw module terminal for easy and secure mounting.

TD320N16S0F Features:

. Solder-Bond Technology

. Industrial standar package

. Elecrtically insulated base plate

. Option: Pre-applied thermal interface naterial(TIM)

Typical Applications

. Soft starters

. Rectifier for driveis applications

. Power controllers

. Rectifiers for UPS

. Battery chargers

. Static switches

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1600V

Gate-Emitter voltage VGES:±20V

Collector current Ic:320A

Collector current Icp:520A

Collector power dissipation Pc:1270W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+130°C

Storage temperature Tstg :-40 to +130°C

tolerans/tolerance ±15% M1 5 Nm

Gewicht Weight 370g

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