Infineon TDB6HK180N16RR IGBT Module

Periodic Reverse Peak Blocking Voltage:Tv = 25°C: VRRM = 1600V

Forward Current RMS Maximum per Diode:Tc = 80°C: IFRMSM = 150A

Rectifier Output Maximum RMS Current:Tc = 80°C: IRMSM = 180A

Surge Forward Current Limits:

• tp = 10ms, Tvj = 25°C: IFSM = 1600A
• tp = 10ms, Tvj = 150°C: 1400A

Maximum Rating for Output Charge per Pulse:

• tp = 10ms, Tvj = 25°C: 12t = 13000A²s
• tp = 10ms, Tvj = 150°C: 9500A²s

Characteristic Values:

• Min. - Typ. - Max.

  • Forward Voltage:

    • Tvj = 150°C, IF = 150A: VF = 1.20V

  • Threshold Voltage:

    • Tvj = 150°C: VTO = 0.83V

  • Slope Resistance:

    • Tvj = 150°C: T = 2.30mΩ

  • Reverse Current:

    • Tvj = 150°C, VR = 1600V: IR = 1.00mA

  • Thermal Resistance, Junction to Case per Diode:

    • RthJC = 0.35K/W

  • Thermal Resistance, Case to Heatsink per Diode:

    • RtnCH = 0.165K/W