Infineon TDB6HK180N16RR_B11 IGBT Module

Typical Applications

●Active Rectifer

●Half CotolledDB6-bridge

Mechanical Fe eatures

● 2.50kV AC 1min  Insulation

●A12O3 Sustate with Low Theral Resistance

●High Power Density

●High mechanical robustess

●Isolated Base Plate

●Compact design

●Copper Base Plate

●Solder Contat technology

●RoHS compliant

' Standard Housing ;

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :180A

Collector current Icp 1ms Tc=25°C :3600A

Collector power dissipation Pc:515W

Isolation Voltage VIsol (AC 1 minute) :3500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3~6 N·m

Weight 180 g