#IXYS, #VMK165_007T, #IGBT_Module, #IGBT, VMK165-007T Power Field-Effect Transistor, 165A I(D), 70V, 0.006ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semicond
Manufacturer Part Number: VMK165-007TPbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: IXYS CORPPart Package Code: TO-240AAPackage Description: FLANGE MOUNT, R-PUFM-X7Pin Count: 7ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 5.73Case Connection: ISOLATEDConfiguration: COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 70 VDrain Current-Max (Abs) (ID): 165 ADrain Current-Max (ID): 165 ADrain-source On Resistance-Max: 0.006 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: TO-240AAJESD-30 Code: R-PUFM-X7Number of Elements: 2Number of Terminals: 7Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 390 WPulsed Drain Current-Max (IDM): 660 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Power Field-Effect Transistor, 165A I(D), 70V, 0.006ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-240AA, TO-240AA, 7 PIN