Shunlongwei Co. ltd.

IGBT Module / LCD Display Distributor

Customer Service
+86-755-8273 2562

IXYS VMO650-01F IGBT Module

#IXYS, #VMO650_01F, #IGBT_Module, #IGBT, VMO650-01F Power Field-Effect Transistor, 690A I(D), 100V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semicon

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code: 11+
. Available Qty: 129
Like
Tweet
Pin It
4k
Email: sales@shunlongwei.com
Whatsapp: 0086 189 2465 1869
Tags:
-- OR --

Request For Price Now !

VMO650-01F Specification

Sell VMO650-01F, #IXYS #VMO650-01F Stock, VMO650-01F Power Field-Effect Transistor, 690A I(D), 100V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,; VMO650-01F, #IGBT_Module, #IGBT, #VMO650_01F
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/vmo650-01f.html

Manufacturer Part Number: VMO650-01FPbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-PUFM-X4ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 5.75Case Connection: ISOLATEDConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 100 VDrain Current-Max (Abs) (ID): 690 ADrain Current-Max (ID): 690 ADrain-source On Resistance-Max: 0.0018 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PUFM-X4Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 2500 WPulsed Drain Current-Max (IDM): 2780 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Power Field-Effect Transistor, 690A I(D), 100V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Latest Components
TOSHIBA
Mitsubishi
Infineon
Sharp