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IXYS VMO650-01F

  • VMO650-01F

VMO650-01F Power Field-Effect Transistor, 690A I(D), 100V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,; VMO650-01F

· Categories: IGBT
· Manufacturer: IXYS
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 129
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Content last revised on June 21, 2023

Manufacturer Part Number: VMO650-01FPbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-PUFM-X4ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 5.75Case Connection: ISOLATEDConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 100 VDrain Current-Max (Abs) (ID): 690 ADrain Current-Max (ID): 690 ADrain-source On Resistance-Max: 0.0018 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PUFM-X4Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 2500 WPulsed Drain Current-Max (IDM): 2780 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Power Field-Effect Transistor, 690A I(D), 100V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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