1DI200H-055 Fuji Electric 550V 200A Single IGBT Module

1DI200H-055 IGBT Module In-stock / Fuji Electric: 550V 200A. High-current switching for motor control. 90-day warranty, industrial welders. Global fast shipping. Get quote.

· Categories: IGBT
· Manufacturer: Fuji Electric
· Price: US$ 75
· Date Code: 2019+
. Available Qty: 126
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Content last revised on November 26, 2025

1DI200H-055: Engineering Analysis of a 550V 200A Single IGBT Module for High-Efficiency Power Conversion

The 1DI200H-055 is a high-current single IGBT module engineered to maximize efficiency in power systems by minimizing conduction losses. This Fuji Electric power transistor module delivers a robust performance profile with core specifications of 550V and 200A. Key engineering benefits include a low on-state voltage that reduces thermal load and a versatile single-switch design that offers maximum topology flexibility. This module is specifically designed for high-current switching applications like motor drives and welders where low conduction losses are critical for system efficiency and thermal stability. For high-current DC chopper or inverter designs prioritizing thermal performance, this module's electrical characteristics offer a distinct advantage.

Key Parameter Overview

Decoding the Electrical Characteristics for Optimal System Performance

The performance of the 1DI200H-055 is defined by its core electrical parameters. These specifications are critical for engineers to accurately model thermal behavior, calculate efficiency, and ensure reliable operation within the device's safe operating limits.

Parameter Value Conditions
Collector-Emitter Voltage (Vces) 550V -
Collector Current (Ic) 200A -
Collector-Emitter Saturation Voltage (VCE(sat)) 2.7V (Max) Ic = 200A, Vge = 15V
Gate-Emitter Voltage (Vges) ±20V -
Operating Junction Temperature (Tj) -40 to +150°C -

Application Scenarios & Value

System-Level Benefits in Industrial Motor Drives and Power Supplies

The 1DI200H-055 is engineered for demanding industrial applications where efficient and reliable power switching is paramount. Its robust current handling and voltage rating make it a suitable choice for the core of many power conversion systems.

A primary application is in Variable Frequency Drives (VFDs). In a VFD, the inverter stage constantly switches high currents to control motor speed. High conduction losses, a function of on-state voltage and current, generate significant heat, which complicates thermal management and reduces overall efficiency. The 1DI200H-055 addresses this challenge directly. Its low collector-emitter saturation voltage at a high 200A current rating minimizes the power dissipated as heat during operation. This allows design engineers to potentially specify a more compact heatsink, operate at a higher ambient temperature, or simply improve the long-term reliability of the VFD system by keeping junction temperatures lower. The module's performance is also highly relevant in high-power Switch-Mode Power Supplies (SMPS) and industrial welding power supplies, where its efficiency contributes directly to lower energy consumption and more robust product design.

For applications requiring a pre-configured half-bridge topology, the 2MBI200NB-120 provides a dual-switch configuration with a higher voltage rating for different system requirements.

Technical Deep Dive

A Closer Look at Conduction Loss and its Impact on Total Cost of Ownership

A defining characteristic of the 1DI200H-055 for a design engineer is its collector-emitter saturation voltage, VCE(sat). This parameter is a direct measure of the voltage drop across the IGBT when it is fully "on" and conducting current. Lower VCE(sat) is highly desirable as it directly correlates to lower conduction power loss, calculated as P(cond) = VCE(sat) × Ic × Duty Cycle. In a high-current module like this one, even a small reduction in VCE(sat) can lead to a significant decrease in wasted energy, which is dissipated as heat.

Think of VCE(sat) as the "friction" that electrical current encounters when the switch is active. Just as low-friction bearings in a motor allow more mechanical power to be delivered, a low VCE(sat) in an IGBT ensures less energy is wasted as heat and more power is delivered to the load. This not only improves electrical efficiency but also lessens the burden on the cooling system, potentially reducing the size, cost, and audible noise of the heatsink and fan assembly, thereby lowering the total cost of ownership over the product's lifecycle.

Frequently Asked Questions

Engineering Questions on Implementation and Performance

What is the primary advantage of the 550V Vces rating?

The 550V rating provides a robust design margin for systems operating on 200/230V AC lines, offering a balance between sufficient voltage headroom to handle transients and optimized switching characteristics compared to higher-voltage IGBTs that may not be necessary for the application.

How does the VCE(sat) of 2.7V (max) at 200A impact thermal design?

This specification is crucial for thermal calculations. It means that under maximum rated current, the device will dissipate a calculable amount of power as heat (P = V × I). A low maximum VCE(sat) value ensures predictable "worst-case" thermal performance, allowing engineers to design a heatsink that guarantees the junction temperature stays within safe limits, enhancing system reliability.

Is the single-switch (1-in-1) configuration of the 1DI200H-055 suitable for three-phase inverter designs?

Yes, the single-switch configuration offers maximum design flexibility. For a standard three-phase bridge inverter, six individual 1DI200H-055 modules would be required (one for each of the six switch positions). This allows for greater physical layout and thermal management options compared to multi-switch modules.

What are the key considerations for the gate drive circuit for this 200A module?

For a high-current module like this, the gate driver must be capable of supplying sufficient peak current to charge and discharge the IGBT's input capacitance quickly, ensuring efficient switching. A gate voltage of +15V is typically used for turn-on, and a negative voltage (e.g., -5V to -15V) is often recommended for turn-off to prevent parasitic turn-on, especially in noisy environments. You can learn more about this in our guide to robust IGBT gate drive design.

As industrial systems continue to prioritize energy efficiency and power density, selecting components like the 1DI200H-055 becomes a strategic decision. Its focus on minimizing on-state losses provides a direct path to creating more efficient, reliable, and cost-effective power conversion solutions, particularly in the established 200-400V industrial application space.

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