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FUJI 1DI300ZP-120 IGBT Module

#FUJI, #1DI300ZP_120, #IGBT_Module, #IGBT, 1DI300ZP-120 Power Bipolar Transistor 300A I(C) 1200V V(BR)CEO 1-Element NPN Silicon Plastic/Epoxy 5 Pin

· Categories: IGBT Module
· Manufacturer: FUJI
· Price: US$ 30
· Date Code: 2020+
. Available Qty: 310
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1DI300ZP-120 Specification

Sell 1DI300ZP-120, #FUJI #1DI300ZP-120 Stock, 1DI300ZP-120 Power Bipolar Transistor 300A I(C) 1200V V(BR)CEO 1-Element NPN Silicon Plastic/Epoxy 5 Pin, #IGBT_Module, #IGBT, #1DI300ZP_120
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/1di300zp-120.html

Manufacturer Part Number: 1DI300ZP-120

Part Life Cycle Code: Obsolete

Ihs Manufacturer: FUJI ELECTRIC CO LTD

Package Description: FLANGE MOUNT, R-PUFM-X5

Pin Count: 5

Manufacturer: Fuji Electric Co Ltd

Risk Rank: 5.84

Collector Current-Max (IC): 300 A

Collector-Emitter Voltage-Max: 1200 V

Configuration: DARLINGTON, 3 TRANSISTORS WITH BUILT-IN DIODE AND RESISTOR

DC Current Gain-Min (hFE): 100

Fall Time-Max (tf): 2000 ns

JESD-30 Code: R-PUFM-X5

Number of Elements: 1

Number of Terminals: 5

Package Body Material: PLASTIC/EPOXY

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Polarity/Channel Type: NPN

Power Dissipation Ambient-Max: 2000 W

Power Dissipation-Max (Abs): 2000 W

Qualification Status: Not Qualified

Rise Time-Max (tr): 3000 ns

Subcategory: BIP General Purpose Power

Surface Mount: NO

Terminal Form: UNSPECIFIED

Terminal Position: UPPER

Transistor Element Material: SILICON

Turn-off Time-Max (toff): 17000 ns

Turn-on Time-Max (ton): 3000 ns

Power Bipolar Transistor 300A I(C) 1200V V(BR)CEO 1-Element NPN Silicon Plastic/Epoxy 5 Pin

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