#Fuji, #2MBI200F_060, #IGBT_Module, #IGBT, 2MBI200F-060 Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, M219, 7 PIN; 2MBI200F-060
Manufacturer Part Number: 2MBI200F-060Part Life Cycle Code: ObsoleteIhs Manufacturer: COLLMER SEMICONDUCTOR INCPackage Description: FLANGE MOUNT, R-PUFM-X7Pin Count: 7Manufacturer: Fuji Electric Co LtdRisk Rank: 5.84Additional Feature: LOW SATURATION VOLTAGECollector Current-Max (IC): 200 ACollector-Emitter Voltage-Max: 600 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEJESD-30 Code: R-PUFM-X7Number of Elements: 2Number of Terminals: 7Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 1500 nsTurn-on Time-Nom (ton): 800 ns Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, M219, 7 PIN