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FUJI 2MBI200NB-120-01 New IGBT Module

#FUJI, #2MBI200NB_120_01, #IGBT_Module, #IGBT, 2MBI200NB-120-01 Insulated Gate Bipolar Transistor 200A I(C) 1200V V(BR)CES N-Channel MODULE-7

· Categories: IGBT Module
· Manufacturer: FUJI
· Price: US$
· Date Code: 2021+
. Available Qty: 380
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2MBI200NB-120-01 Specification

Sell 2MBI200NB-120-01, #FUJI #2MBI200NB-120-01 New Stock, 2MBI200NB-120-01 Insulated Gate Bipolar Transistor 200A I(C) 1200V V(BR)CES N-Channel MODULE-7, #IGBT_Module, #IGBT, #2MBI200NB_120_01
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/2mbi200nb-120-01.html

Manufacturer Part Number: 2MBI200NB-120-01

Part Package Code: MODULE

Package Description: FLANGE MOUNT, R-XUFM-X7

Pin Count: 7

Manufacturer: Fuji Electric Co Ltd

Case Connection: ISOLATED

Collector Current-Max (IC): 200 A

Collector-Emitter Voltage-Max: 1200 V

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND CUR LIMITING CIRCUIT

JESD-30 Code: R-XUFM-X7

Number of Elements: 2

Number of Terminals: 7

Package Body Material: UNSPECIFIED

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Polarity/Channel Type: N-CHANNEL

Surface Mount: NO

Terminal Form: UNSPECIFIED

Terminal Position: UPPER

Transistor Application: POWER CONTROL

Transistor Element Material: SILICON

Turn-off Time-Nom (toff): 850 ns

Turn-on Time-Nom (ton): 650 ns

Insulated Gate Bipolar Transistor 200A I(C) 1200V V(BR)CES N-Channel MODULE-7

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