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Fuji 2MBI600VD-060-50 IGBT Module

Fuji Electric 2MBI600VD-060-50: A high-reliability 600V/600A V-Series IGBT with low conduction loss and soft switching for maximum efficiency in demanding power systems.

· Categories: IGBT Module
· Manufacturer: Fuji
· Price: US$ 50
· Date Code: 2021+
. Available Qty: 357
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2MBI600VD-060-50 Specification

Fuji Electric 2MBI600VD-060-50 | 6th Gen V-Series IGBT for High-Reliability Power Conversion

The Fuji Electric 2MBI600VD-060-50 is a high-current, dual IGBT module engineered to deliver exceptional performance in demanding power conversion systems. Leveraging Fuji's mature 6th Generation V-Series technology, this module provides a robust and efficient solution for applications requiring precise control of high-power loads. It is specifically designed for system architects and power electronics engineers who prioritize reliability, thermal stability, and low conduction losses in a compact, industry-standard package.

Core Technology and Engineering Advantages

The performance of the 2MBI600VD-060-50 is rooted in Fuji Electric's advanced V-Series silicon. This generation perfects the Trench Gate and Field-Stop (FS) structures to create a superior balance between conduction and switching losses.

  • Low Conduction Loss: The module features an exceptionally low collector-emitter saturation voltage (VCE(sat)). This characteristic is a direct result of the optimized trench gate design, which enhances carrier concentration. For engineers, this translates to significantly reduced power dissipation during the on-state, leading to lower operating temperatures and improved overall system efficiency, particularly in applications with high duty cycles like motor drives.
  • Enhanced Thermal Performance: Housed in a standard M242 package with an insulated metal baseplate, the module is engineered for superior heat dissipation. The low thermal resistance from junction to case ensures that heat generated within the silicon is efficiently transferred to the heatsink. This robust thermal design is critical for ensuring reliability and preventing premature component failure under heavy load conditions. Proper thermal management is key to maximizing the operational lifespan of high-power IGBT modules.
  • Soft Switching Characteristics: The module includes a fast recovery diode (FWD) that is optimally matched with the IGBT. This pairing ensures soft switching behavior, which minimizes voltage overshoots and electromagnetic interference (EMI). This simplifies the design of snubber circuits and reduces the need for extensive EMI filtering, saving both board space and component cost.

Application Scenarios and Value Proposition

The unique electrical and thermal characteristics of the Fuji Electric 2MBI600VD-060-50 make it an ideal choice for several high-power industrial applications.

  • High-Power Motor Drives: In variable frequency drives (VFDs) for industrial motors, the module's 600A current rating and low VCE(sat) enable efficient and precise control of motors well into the megawatt range. Its ability to handle high current pulses ensures reliable operation during motor startup and dynamic load changes.
  • Uninterruptible Power Supplies (UPS): For large-scale UPS systems, reliability is paramount. The 2MBI600VD-060-50 provides the robust performance needed for the inverter stage, ensuring a clean and stable AC output. Its high thermal cycling capability guarantees long-term performance through repeated power events.
  • Welding Power Supplies: The fast and soft switching capabilities are highly beneficial in high-frequency welding applications. The module allows for precise control over the welding arc, resulting in higher quality welds, while its ruggedness ensures it can withstand the harsh electrical environment of industrial welders.

Key Parameter Overview

The following table provides a summary of the critical electrical and thermal specifications for the 2MBI600VD-060-50. For complete details, engineers should consult the official product datasheet. You can access the full datasheet here: Download the Datasheet.

Parameter Value
Collector-Emitter Voltage (Vces) 600V
Continuous Collector Current (Ic) @ Tc=80°C 600A
Collector-Emitter Saturation Voltage (Vce(sat)) typ. @ Ic=600A 1.7V
Gate-Emitter Voltage (Vges) ±20V
Power Dissipation per IGBT (Pc) 2800W
Operating Junction Temperature (Tj) -40 to +150°C
Configuration 2-in-1 (Half-Bridge)

Selection and Strategic Considerations

When selecting a power module, it is crucial to match the component's ratings to the application's requirements. The 2MBI600VD-060-50, with its 600V rating, is perfectly suited for systems operating on 200-240V AC lines. For applications requiring higher bus voltages, such as those on 480V or 690V AC lines, a module with a higher voltage rating would be necessary. For instance, the 2MBI600XHA120-50 is another Fuji Electric module with the same 600A current rating but features a 1200V breakdown voltage. While it handles higher voltages, it typically has a higher VCE(sat) compared to its 600V counterpart. Choosing the 2MBI600VD-060-50 for a 600V application ensures you are not over-specifying the voltage, thereby gaining the benefit of lower conduction losses and higher efficiency. This level of datasheet-driven decision-making is fundamental to cost-effective and reliable power system design.

Frequently Asked Questions (FAQ)

1. Can the 2MBI600VD-060-50 modules be paralleled for higher current output?

Yes, these modules can be paralleled, but careful design is essential. To ensure proper current sharing, it is critical to use gate driver circuits with individual gate resistors for each module and to ensure symmetrical layout of the busbars to equalize stray inductances. The positive temperature coefficient of the VCE(sat) in Fuji's V-Series IGBT technology provides a degree of self-balancing for thermal runaway, which is a key advantage for parallel operation.

2. What is the recommended gate drive voltage for this module?

The recommended gate drive voltage is typically +15V for turn-on and -8V to -15V for turn-off. A negative gate voltage is strongly recommended to provide a robust noise margin and prevent parasitic turn-on, especially in high dV/dt environments common in power inverters. Always refer to the datasheet for specific gate drive requirements.

For detailed application support or to explore our full range of IGBT modules, please do not hesitate to contact our technical team.

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