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FUJI 6DI10MS-050

  • 6DI10MS-050

6DI10MS-050 FUJI Power Bipolar Transistor, 10A 600V 6-Element, NPN, Silicon

· Categories: IGBT
· Manufacturer: FUJI
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 425
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Content last revised on December 25, 2024

Features
● High Arm Short Circuit Capability
● High DC Current Gain
● Including Free Wheeling Diode
● Insulated Type

Applications
● General Purpose Inverter
● Uninterruptible Power Supply
● Servo & Spindel Drive for NC Machine Tools
● Robotics (Servo Drive for Robots)
● Switching Power Supples for Welding Machines

Maximum ratings and characteristics
●Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :10A
Collector current Icp 1ms Tc=25°C :20A
Collector power dissipation Pc:900W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5  N·m

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