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FUJI 6MBI20GS-060 IGBT Module

#FUJI, #6MBI20GS_060, #IGBT_Module, #IGBT, 6MBI20GS-060 Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, SIP-11; 6MBI20GS-060

· Categories: IGBT Module
· Manufacturer: FUJI
· Price: US$
· Date Code: 11+
. Available Qty: 188
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6MBI20GS-060 Specification

Sell 6MBI20GS-060, #FUJI #6MBI20GS-060 Stock, 6MBI20GS-060 Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, SIP-11; 6MBI20GS-060, #IGBT_Module, #IGBT, #6MBI20GS_060
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/6mbi20gs-060.html

Manufacturer Part Number: 6MBI20GS-060Part Life Cycle Code: ObsoleteIhs Manufacturer: FUJI ELECTRIC CO LTDPackage Description: FLANGE MOUNT, R-XSFM-P11Pin Count: 11Manufacturer: Fuji Electric Co LtdRisk Rank: 5.82Case Connection: ISOLATEDCollector Current-Max (IC): 20 ACollector-Emitter Voltage-Max: 600 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XSFM-P11Number of Elements: 6Number of Terminals: 11Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 70 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: PIN/PEGTerminal Position: SINGLETransistor Application: POWER CONTROLTransistor Element Material: SILICONVCEsat-Max: 2.8 V Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, SIP-11

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