PM50RLB060 Description
FEATURE
a) Adopting new 5th generation IGBT (CSTBT) chip, whichper formance is improved by 1μm fine rule process.For example, typical Vce(sat)=1.5V @Tj=125°C
b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each con-servation upper and lower arm of IPM.
c) New small package Reduce the package size by 32%, thickness by 22% from SDASH series.
d) Current rating of brake part increased.60% for the current rating of inverter part.
•3φ 50A, 600V Current-sense IGBT type inverter
• 30A, 600V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, short-circuit, over-temperature & under-voltage (P-Fo available from upper arm devices)
• Acoustic noise-less 3.7kW class inverter application
MAXIMUM RATINGS(Tj = 25°C, unless otherwise noted)
INVERTER PART
VCES Collector-Emitter Voltage VD= 15V, VCIN= 15V 600 V
±IC Collector Current TC= 25°C 50 A
±ICP Collector Current (Peak) TC= 25°C 100 A
PC Collector Dissipation TC= 25°C 101 W
Tj Junction Temperature –20 ~ +150 °C
Viso Isolation Voltage 60Hz, Sinusoidal, Charged part to Base, AC 1 min. 2500V
