#FUJI, #6MBI35S_140, #IGBT_Module, #IGBT, 6MBI35S-140 Insulated Gate Bipolar Transistor, 50A I(C), 1400V V(BR)CES, N-Channel, MODULE-17; 6MBI35S-140
Manufacturer Part Number: 6MBI35S-140Part Life Cycle Code: ObsoleteIhs Manufacturer: FUJI ELECTRIC CO LTDPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X17Pin Count: 17Manufacturer: Fuji Electric Co LtdRisk Rank: 5.84Case Connection: ISOLATEDCollector Current-Max (IC): 50 ACollector-Emitter Voltage-Max: 1400 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEJESD-30 Code: R-XUFM-X17Number of Elements: 6Number of Terminals: 17Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 530 nsTurn-on Time-Nom (ton): 600 ns Insulated Gate Bipolar Transistor, 50A I(C), 1400V V(BR)CES, N-Channel, MODULE-17