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APT APT75GT120JRDQ3 IGBT Module

APT75GT120JRDQ3: 1200V/108A IGBT with low 7mJ switching energy & fast FRED. Boosts high-frequency efficiency, enabling smaller heatsinks and lower system costs.

· Categories: IGBT Module
· Manufacturer: APT
· Price: US$ 50
· Date Code: 2023+
. Available Qty: 27
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APT75GT120JRDQ3 Specification

APT75GT120JRDQ3 1200V IGBT Module: Engineering for High-Frequency Switching Efficiency

An In-Depth Analysis for Power System Engineers

Content last revised on October 13, 2025.

Engineered for superior switching efficiency in high-frequency converters, the APT75GT120JRDQ3 is a 1200V phase-leg power module defined by its low total energy loss design. This device integrates a Thunderbolt IGBT™ with a fast recovery diode to deliver critical performance metrics: 1200V | 108A @ 25°C | Ets 7mJ (typ). The primary engineering benefits include the ability to enable higher operating frequencies and a significant reduction in thermal management costs. Its integrated fast recovery epitaxial diode (FRED) with a 130ns recovery time is pivotal for minimizing losses during hard-switching events, a common design challenge in welding and SMPS applications. For high-frequency SMPS and welding systems where minimizing switching losses is paramount, the APT75GT120JRDQ3's low total switching energy (Ets) makes it a definitive choice.

Key Parameter Overview

Decoding the Specs for Efficient Power Conversion

The technical specifications of the APT75GT120JRDQ3 are optimized for applications demanding rapid and efficient power switching. The following parameters, sourced from the official datasheet, are essential for system design and simulation.

Functional Group: Static Electrical Characteristics (Tj = 25°C unless otherwise specified)
VCE(sat) | Collector-Emitter Saturation Voltage 3.0V (Max) @ IC = 75A
VGE(th) | Gate Threshold Voltage 5.8V (Typ)
ICES | Collector Cutoff Current 250µA (Max) @ VCE = 1200V
IGES | Gate-Emitter Leakage Current ±100nA (Max) @ VGE = ±20V
Functional Group: Dynamic and Switching Characteristics
Eon | Turn-on Switching Energy 2.5 mJ (Typ) @ 125°C
Eoff | Turn-off Switching Energy 4.5 mJ (Typ) @ 125°C
Ets | Total Switching Energy 7.0 mJ (Typ) @ 125°C
trr | Diode Reverse Recovery Time 130 ns (Typ) @ 125°C
Qg | Total Gate Charge 240 nC (Typ)
Functional Group: Thermal and Mechanical Characteristics
Rth(j-c) | Junction-to-Case Thermal Resistance 0.31 °C/W (Max, per IGBT)
Package SOT-227 (ISOTOP®)

Download the APT75GT120JRDQ3 datasheet for detailed specifications and performance curves.

Application Scenarios & Value

Achieving System-Level Benefits in High-Frequency Power Conversion

The APT75GT120JRDQ3 IGBT module is engineered for environments where switching losses are a primary driver of system size and cost. Its defining characteristics deliver measurable value in several demanding applications.

  • High-Frequency Welding Power Supplies: In a high-frequency welder, every switching event generates heat. The core engineering challenge is to maximize output power without creating an unwieldy, oversized unit. The APT75GT120JRDQ3's low total switching energy (Ets) of 7 mJ directly confronts this issue. By generating less waste heat per cycle, it allows designers to push operating frequencies higher, which in turn reduces the size and cost of magnetic components. The fast FRED is critical in the hard-switching topologies common to these systems, preventing the large current spikes that reduce efficiency and stress components.
  • Switched Mode Power Supplies (SMPS): For large-scale industrial SMPS, efficiency is not just an operational benefit; it's a key market differentiator. This module's low conduction and switching losses contribute to higher overall system efficiency, simplifying compliance with standards like 80 PLUS Titanium.
  • Induction Heating: The module's ability to switch efficiently at high frequencies makes it a strong candidate for resonant converters used in induction heating systems, where precise power control and high performance are essential.

While the APT75GT120JRDQ3 is optimized for 75A nominal applications, for systems requiring higher power throughput within the same voltage class, the CM150DY-24H offers a higher current rating of 150A.

Frequently Asked Questions (FAQ)

How does the 7 mJ total switching energy (Ets) of the APT75GT120JRDQ3 influence thermal design?
A lower Ets value directly correlates to lower power dissipation as heat. This allows engineers to specify a smaller, lighter, and more cost-effective heatsink for a given operating current and frequency. What is the effect of lower thermal dissipation? It improves system reliability and enables higher power density.

What is the primary benefit of the co-packaged FRED with a 130ns reverse recovery time (trr)?
In a phase-leg configuration, the freewheeling diode's performance is critical. A fast trr of 130ns significantly reduces the turn-on losses in the opposing IGBT. This is because the diode stops conducting and begins blocking reverse voltage much more quickly, minimizing the period of "shoot-through" current that is a major source of loss and EMI in hard-switched converters.

Is the SOT-227 package suitable for automated assembly lines?
Yes, the SOT-227 is a fully isolated, screw-terminal package designed for straightforward mounting to a heatsink. Its standardized footprint and robust construction are well-suited for manufacturing environments, simplifying both manual and automated assembly processes. The module is also specified as "aqueous washable," which can streamline post-soldering cleaning procedures.

Technical Deep Dive

A Closer Look at Switching Performance and Diode Recovery Characteristics

The performance of the APT75GT120JRDQ3 is rooted in the synergy between its switching transistor (the Thunderbolt IGBT™) and its freewheeling diode (FRED). In phase-leg topologies, such as those found in inverters and half-bridge converters, the diode's reverse recovery characteristics are just as important as the IGBT's switching speed. When one IGBT turns on, it must force the diode paired with the other IGBT to turn off. A slow diode leads to a significant reverse recovery current (Irr), which the turn-on IGBT must source. This not only adds to the turn-on loss (Eon) but can also cause voltage overshoots and electromagnetic interference (EMI).

The module's fast (130ns trr) and soft recovery FRED is engineered to mitigate these issues. To understand its impact, consider an analogy: the fast FRED acts like a high-performance braking system in a car. A standard, slower diode is like brakes with a noticeable delay, causing a significant 'jolt' (a large, lossy current spike) when finally engaged. The fast FRED, however, engages almost instantly, minimizing this jolt and wasting far less energy as heat during the transition.

Industry Insights & Strategic Advantage

Enabling Higher Power Density in Next-Generation Converters

The push for electrification and energy efficiency is reshaping the power electronics industry. System designers are under constant pressure to deliver more power in smaller, lighter packages—a trend driven by everything from portable industrial equipment to data center power infrastructure. The APT75GT120JRDQ3 directly supports this objective. Its low-loss characteristics are not just an incremental improvement; they are an enabling technology for achieving higher power density.

Operating at higher frequencies is a primary method for reducing the physical size of power converters, as it allows for smaller inductors and transformers. However, this is only feasible if switching losses are kept under control. Modules with high Ets values would quickly overheat at elevated frequencies. By minimizing these losses, this IGBT allows designers to leverage the benefits of high-frequency operation without incurring a severe thermal penalty. For more information on IGBTs, you can refer to resources from industry leaders like Infineon. This strategic advantage is crucial in applications like advanced welding power supplies and the high-power Power Factor Correction (PFC) stages required in modern AC-DC converters, where both performance and form factor are key competitive differentiators. For a deeper understanding of device specifications, explore this guide on decoding IGBT datasheets.

Engineering Support and Further Analysis

Selecting the optimal IGBT module requires a comprehensive analysis of the target application's unique electrical and thermal demands. For assistance with your design, including thermal simulations, gate drive design considerations, or evaluation of specific operating conditions, our team of application specialists is available to provide technical support. We can help you interpret the datasheet's performance curves and model the APT75GT120JRDQ3's behavior in your system to ensure you achieve your project's performance and reliability goals.

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