#APT, #APT75GT120JRDQ3, #IGBT_Module, #IGBT, APT75GT120JRDQ3 Insulated Gate Bipolar Transistor, 97A I(C), 1200V V(BR)CES, N-Channel, ISOTOP-4;
The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch
Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed.
• Low Forward Voltage Drop
• High Freq. Switching to 20KHz
• Low Tail Current
• Ultra Low Leakage Current
• RBSOA and SCSOA Rated
MAXIMUM RATINGS All Ratings: TC= 25°C unless otherwise specified.
Collector-Emitter Voltage (VCES): 1200 Volts
Gate-Emitter Voltage (VGE): -30 to +30 Volts
Continuous Collector Current @ TC = 25°C (IC1): 9742 Amps
Continuous Collector Current @ TC = 110°C (IC2): 225 Amps
Pulsed Collector Current 1 @ TC = 150°C (ICM): 225 Amps
Switching Safe Operating Area @ TJ = 150°C (SOA): Not specified
Total Power Dissipation (PD): 481 Watts
Operating and Storage Junction Temperature Range (TJ, TSTG): -55 to +150°C
Max. Lead Temp. for Soldering (TL): 300°C for 10 Sec.
RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min) (
VIsolation) 2500Volts