Content last revised on October 31, 2024
BSM100GB120DLCK
Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: YES
Brand: Infineon Technologies
Product: IGBT Silicon Modules
Configuration: Dual
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.1 V
Continuous Collector Current Tc=80°C: 100A
Continuous Collector Current Tc=25°C: 205 A
Gate-Emitter Leakage Current: 400 nA
Maximum Operating Temperature: + 125 C
Package / Case: 34MM
Packaging: Tray
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Pd - Power Dissipation: 835 W
Factory Pack Quantity: 500
