Content last revised on April 7, 2024
BSM10GP120
Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: YES
Brand: Infineon Technologies
Product: IGBT Silicon Modules
Configuration: Hex
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.4 V
Continuous Collector Current at 25 C: 20 A
Gate-Emitter Leakage Current: 300 nA
Pd - Power Dissipation: 100 W
Package / Case: EconoPIM2
Maximum Operating Temperature: + 125 C
Packaging: Tray
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Factory Pack Quantity: 10
IGBT: 10A1200V; IGBT Modules 1200V 10A PIM
