Infineon BSM300GB120DLC_E3256 | A Robust Power Module for High-Reliability Systems
The Infineon BSM300GB120DLC_E3256 is a 1200V, 300A dual IGBT module engineered for enduring performance in demanding power conversion applications. For design engineers working on high-power motor drives, uninterruptible power supplies (UPS), and industrial inverters, this module represents a benchmark in reliability and thermal stability. It combines proven NPT IGBT technology with a robust package design to deliver a cost-effective solution without compromising on operational integrity.
Core Technical Highlights
- High Collector Current (Ic): Rated for 300A continuous current, providing substantial power handling capability for heavy industrial loads.
- Low Conduction Losses: Features a low collector-emitter saturation voltage (VCE(sat)) to minimize heat generation during operation, enhancing overall system efficiency.
- Robust Thermal Management: The module's design, featuring an isolated copper baseplate, ensures superior heat dissipation and a low thermal resistance from junction to case (RthJC).
- Integrated NTC Thermistor: Includes an NTC thermistor for real-time temperature monitoring, enabling precise thermal protection and system control.
- Industry-Standard Footprint: Housed in a standard package, allowing for straightforward integration into existing designs and simplified mechanical layouts.
Key Parameter Overview
The following table outlines the critical electrical and thermal characteristics of the BSM300GB120DLC_E3256. These parameters are essential for accurate system modeling and performance prediction. For comprehensive specifications and application notes, you can download the official datasheet.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (V_CES) | 1200 V |
| Continuous Collector Current (I_C) @ T_c = 80°C | 300 A |
| Collector-Emitter Saturation Voltage (V_CE(sat)) @ I_C = 300A, T_j = 25°C | 2.1 V (Typ.) / 2.5 V (Max.) |
| Total Power Dissipation (P_tot) @ T_c = 25°C | 1400 W |
| Thermal Resistance, Junction-to-Case (R_thJC) per IGBT | 0.09 K/W (Max.) |
| Short Circuit Withstand Time (t_psc) @ V_GE = 15V | 10 µs |
Application Scenarios & Engineering Value
The BSM300GB120DLC_E3256 is not just a component; it's a solution for specific engineering challenges. Its architecture makes it exceptionally well-suited for applications where reliability and thermal performance are non-negotiable.
- Variable Frequency Drives (VFDs): In motor control, the module's excellent Thermal Resistance characteristics ensure stable operation under fluctuating load conditions. Its low VCE(sat) directly translates to higher inverter efficiency and reduced heatsink requirements, saving both space and cost.
- Uninterruptible Power Supplies (UPS): For critical power infrastructure, the robust Safe Operating Area (SOA) and high short-circuit withstand time provide the resilience needed to handle grid faults and load transients without failure. This is a cornerstone for building dependable UPS systems. For more on this, explore our guide to preventing common IGBT failures.
- Industrial Welders & Induction Heating: These applications demand rapid and repetitive power cycling. The module's rugged construction is designed to withstand the associated thermomechanical stress, ensuring a long operational lifespan even in harsh industrial environments.
Strategic Advantage: The Proven Workhorse
In an era of rapid technological advancement with SiC and GaN, silicon IGBT modules like the BSM300GB120DLC_E3256 hold a unique strategic position. It represents a mature, well-understood technology with a vast repository of field data. For engineers designing systems with long life cycles and stringent validation requirements, this module offers a low-risk, high-reliability pathway. Its performance characteristics are thoroughly documented, simplifying simulation, design, and qualification processes. This makes it an ideal choice for upgrading legacy systems or for new designs where cost-effectiveness and proven durability are paramount over cutting-edge switching speeds.
Engineer's FAQ
Our experts address common questions about integrating the BSM300GB120DLC_E3256 into your designs.
- What are the key considerations for the gate drive circuit?A: Given its gate charge characteristics, a robust gate drive capable of supplying sufficient peak current is essential for efficient switching. We recommend using a gate voltage of +15V for turn-on and a negative voltage of -8V to -15V for turn-off to ensure immunity against parasitic turn-on events, especially in noisy industrial environments. For further reading, consult our practical tips for robust gate drive design.
- Can this module be paralleled for higher current applications?A: Yes, the BSM300GB120DLC_E3256 can be paralleled. Its positive temperature coefficient of VCE(sat) provides a degree of self-balancing for thermal runaway. However, for optimal current sharing, careful attention must be paid to symmetrical PCB layout, matched gate drive paths, and minimizing stray inductance in the busbar design.
For detailed application support or to discuss your project's specific requirements, please contact our technical team for expert guidance.
