IGBT Power Module
- Single switch
- Including fast free-wheeling diodes
- Package with insulated metal base plate
Maximum ratings and characteristics
- Collector-emitter voltage (VCE): 1200V
- Collector-gate voltage (RGE = 20 kΩ) (VCGR): 1200V
- Gate-emitter voltage (VGE): ±20V
- DC collector current (TC = 25°C): 400A
- DC collector current (TC = 80°C): 550A
- Pulsed collector current, tp = 1 ms (TC = 25°C): 800A
- Pulsed collector current, tp = 1 ms (TC = 125°C): 1100A
- Power dissipation per IGBT (TC = 25°C): 2700W
- Chip temperature (Tj): +150°C
- Storage temperature (Tstg): -40 to +125°C
- Thermal resistance, chip case (RthJC): ≤0.045K/W
