The BSM400GA120DN2SE3256 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon Technologies. It is a high-power device used for various applications that require switching and control of high voltage and current levels. Here are the details based on the provided information:
- Part # Aliases: BSM400GA120DN2SE3256
- Manufacturer: Infineon
- Product Category: IGBT Modules
- Configuration: Single switch
- Including fast free-wheeling diodes
- Package with insulated metal base plate
- Collector-emitter voltage VCE: 1200V
- Collector-gate voltage RGE: 20 kW, VCGR 1200V
- Gate-emitter voltage VGE: ± 20V
- DC collector current TC = 25°C: 550A
- DC collector current TC = 80°C: 550A
- Pulsed collector current, tp = 1 ms TC = 25°C to 125°C: 1100A
- Power dissipation per IGBT TC = 25°C: 2700W
- Chip temperature Tj: +150°C
- Storage temperature Tstg: -40 to +125°C
