Infineon BSM400GA120DN2SE3256 IGBT Module

The BSM400GA120DN2SE3256 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon Technologies. It is a high-power device used for various applications that require switching and control of high voltage and current levels. Here are the details based on the provided information:

• Part # Aliases: BSM400GA120DN2SE3256
• Manufacturer: Infineon
• Product Category: IGBT Modules
• Configuration: Single switch
• Including fast free-wheeling diodes
• Package with insulated metal base plate
• Collector-emitter voltage VCE: 1200V
• Collector-gate voltage RGE: 20 kW, VCGR 1200V
• Gate-emitter voltage VGE: ± 20V
• DC collector current TC = 25°C: 550A
• DC collector current TC = 80°C: 550A
• Pulsed collector current, tp = 1 ms TC = 25°C to 125°C: 1100A
• Power dissipation per IGBT TC = 25°C: 2700W
• Chip temperature Tj: +150°C
• Storage temperature Tstg: -40 to +125°C