Mitsubishi CM150E3U-12H is a power module or an insulated-gate bipolar transistor (IGBT) module used in power electronics applications.
CM150E3U-12H is a high power module with rated voltage 1200V & maximum current 150A. CM150E3U-12H is commonly used in motor drives, welding equipment, and power converters.
The CM150E3U-12H module has a compact design and low thermal resistance, allowing it to operate efficiently in high-temperature environments. CM150E3U-12H equipped with built-in temperature sensor that provides protection against in over-temperature operation conditions.
CM150E3U-12H Specification:
Manufacturer Part Number: CM150E3U-12H
Manufacturer: Mitsubishi ELECTRIC CORP
Package Description: FLANGE MOUNT, R-XUFM-X5
Additional Feature: SUPER FAST RECOVERY
Case Connection: ISOLATED
Collector Current-Max (IC): 150 A
Collector-Emitter Voltage-Max: 600 V
Configuration: SINGLE WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X5
Number of Elements: 1
Number of Terminals: 5
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 600 W
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Insulated Gate Bipolar Transistor 150A I(C) 600V V(BR)CES N-Channel
