Shunlongwei Co. ltd.

IGBT Module / LCD Display Distributor

Customer Service
+86-755-8273 2562

Mitsubishi CM150E3U-24H IGBT Module

#Mitsubishi, #CM150E3U_24H, #IGBT_Module, #IGBT, CM150E3U-24H Insulated Gate Bipolar Transistor 150A I(C) 1200V V(BR)CES N-Channel; CM150E3U-24H

· Categories: IGBT Module
· Manufacturer: Mitsubishi
· Price: US$ 54
· Date Code: 2019+
. Available Qty: 259
Like
Tweet
Pin It
4k
Email: sales@shunlongwei.com
Whatsapp: 0086 189 2465 1869
+Shipping: US$ 35
= Total: US$ 89
-- OR --

Request For Discount Now !

CM150E3U-24H Specification

Sell CM150E3U-24H, #Mitsubishi #CM150E3U-24H Stock, CM150E3U-24H Insulated Gate Bipolar Transistor 150A I(C) 1200V V(BR)CES N-Channel; CM150E3U-24H, #IGBT_Module, #IGBT, #CM150E3U_24H
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/cm150e3u-24h.html

Manufacturer Part Number: CM150E3U-24H

Manufacturer: Mitsubishi ELECTRIC CORP

Package Description: FLANGE MOUNT, R-XUFM-X5

Additional Feature: SUPER FAST RECOVERY

Case Connection: ISOLATED

Collector Current-Max (IC): 150 A

Collector-Emitter Voltage-Max: 1200 V

Configuration: SINGLE WITH BUILT-IN DIODE

Gate-Emitter Voltage-Max: 20 V

JESD-30 Code: R-XUFM-X5

Number of Elements: 1

Number of Terminals: 5

Operating Temperature-Max: 150 °C

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Peak Reflow Temperature (Cel): NOT SPECIFIED

Polarity/Channel Type: N-CHANNEL

Power Dissipation-Max (Abs): 890 W

Subcategory: Insulated Gate BIP Transistors

Terminal Position: UPPER

Insulated Gate Bipolar Transistor 150A I(C) 1200V V(BR)CES N-Channel

Latest Components
Mitsubishi
Sharp
Semikron
Mitsubishi