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MITSUBISHI CM200DY-12E IGBT Module

CM200DY-12E Insulated Gate Bipolar Transistor 200A I(C) 600V V(BR)CES; CM200DY-12E

· Categories: IGBT Module
· Manufacturer: MITSUBISHI
· Price: US$ 34
· Date Code: 2024+
. Available Qty: 377
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CM200DY-12E Specification

Manufacturer Part Number: CM200DY12E
Part Life Cycle Code: Active
Ihs Manufacturer: Powerex INC
Package Description: ,
Manufacturer: Powerex Power Semiconductors
Risk Rank: 5.73
Collector Current-Max (IC): 200 A
Collector-Emitter Voltage-Max: 600 V
Gate-Emitter Voltage-Max: 20 V
Number of Elements: 2
Operating Temperature-Max: 150 °C
Power Dissipation-Max (Abs): 780 W
Subcategory: Insulated Gate BIP Transistors
VCEsat-Max: 3.5 V
Insulated Gate Bipolar Transistor 200A I(C) 600V V(BR)CES

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